v ds i d (at v gs =10v) 10a r ds(on) (at v gs =10v) < 140m w r ds(on) (at v gs = 4.5v) < 152m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.4 53 4 power dissipation b p d w power dissipation a p dsm w t a =70c 31 1.5 t a =25c a t a =25c i dsm a t a =70c i d 10 6 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 2 continuous drain current 5 2.5 a 10 the AON6486 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v units junction and storage temperature range -55 to 150 c thermal characteristics v 20 gate-source voltage drain-source voltage 100 maximum junction-to-ambient a c/w r q ja 17 44 21 13 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.3 12.5 t c =100c g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 AON6486 100v n-channel mosfet general description features free datasheet http:///
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.7 2.2 2.8 v i d(on) 13 a 116 140 t j =125c 225 270 121 152 m w g fs 17 s v sd 0.76 1 v i s 12 a c iss 350 445 540 pf c oss 18 27 35 pf c rss 9 16 23 pf r g 1 2 3 w q g (10v) 8 10.3 13 nc q g (4.5v) 4 5.1 6.5 nc q gs 1.6 nc q gd 2.4 nc t d(on) 8 ns t r 3 ns t d(off) 17 ns t f 4.5 ns t rr 14.5 21 27.5 ns q rr 68 97 126 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4.5a reverse transfer capacitance i f =4.5a, di/dt=500a/ m s v gs =0v, v ds =50v, f=1mhz switching parameters diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance i s =1a,v gs =0v v ds =5v, i d =4.5a v gs =4.5v, i d =3a v ds =v gs i d =250 m a r ds(on) static drain-source on-resistance m w v gs =10v, v ds =50v, r l =8.6 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =50v, i d =4.5a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =4.5a, di/dt=500a/ m s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. www.freescale.net.cn 2/6 AON6486 100v n-channel mosfet free datasheet http:///
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 5 10 15 0 1 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 100 120 140 160 180 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =3a v gs =10v i d =4.5a 100 120 140 160 180 200 220 240 260 280 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =4.5a 25c 125c 0 5 10 15 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3.5v 4v 6v 10v 4.5v www.freescale.net.cn 3/6 AON6486 100v n-channel mosfet free datasheet http:///
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 0 20 40 60 80 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =50v i d =4.5a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =4c/w www.freescale.net.cn 4/6 AON6486 100v n-channel mosfet free datasheet http:///
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =53c/w 1 10 100 1 10 100 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 AON6486 100v n-channel mosfet free datasheet http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AON6486 100v n-channel mosfet free datasheet http:///
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